Abstract
A simple analytical model has been developed to predict the threshold voltage on drain bias dependence of an arbitrarily doped short-channel MOSFET. Based on an analytical solution of the two-dimensional Poisson equation, the potential distribution in the channel depletion region has been derived. The maximum surface field and the minimum surface potential are used to determine the threshold voltage. The influence of drain voltage on threshold voltage has been included by an equivalent shrinkage of the virtual channel length hereafter called “voltage-length transformation”. This simple but general procedure enables us to account for the drain effect and to extend other threshold voltage models derived under assumption of low drain-source voltage. Predictions for threshold voltage have been compared with results of two-dimensional numerical analysis and experimental data. The comparison has been made for a wide variety of doping profiles, channel length, substrate and drain bias, gate oxide thickness and junction depth. Excellent agreement has been obtained down to submicron channel length.
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