Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition

Abstract

Using conformal mapping, we derive an analytic expression for the thickness d of a deposited film as a function of the distance r from a mask edge in selective area growth by organometallic chemical vapor deposition (OMCVD). Adjacent to the mask d∼r−1/2, which is clearly different from the exponential dependence observed for large planar surfaces. The result provides a means of distinguishing growth mechanisms in OMCVD.