Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide Masks

Abstract

A study of selective area growth by atmospheric pressure organometallic chemical vapor deposition (OMCVD) using plasma‐grown native oxide masks was conducted. Deposition experiments were carried out with different growth parameters to observe the variation of polycrystalline coverage on the oxide mask. With high growth temperatures or low V/III ratios, poly deposition on the mask was depleted, particularly in regions near the unmasked single‐crystal areas. With the optimum conditions for growth, the polycrystalline growth was homogeneous to the single‐crystal boundary, and the single‐crystal areas exhibited liquid nitrogen mobilities up to 105,000 cm2/Vs. Etch‐and‐fill experiments were also performed using a based etch to obtain near vertically etched sidewalls. Growth from the walls caused little distortion at the edges of the filled pockets and flat single‐crystal surfaces were obtained.