Monolithic integration of III-V materials and devices on silicon

Abstract

The realization of monolithic optical interconnects by integration of III-V materials with conventional Si circuitry has long been hindered by materials incompatibilities (i.e. lattice mismatch and heterovalent interface) and practical processing constraints. We have demonstrated successful integration of hetero-epitaxially grown InGaAs/Si diodes with an n-well CMOS process on (001) Si offcut 6 degrees towards [110]. The In0.15Ga0.85As/InxGa1- xAs/GaAs/Si diodes were grown by atmospheric pressure organo-metallic chemical vapor deposition (OMCVD) and features a room temperature R0A product of 20,000 ohm-cm2. No degradation of PMOS or NMOS transistor characteristics was detected upon integration of the III-V devices. Further improvement of III-V/Si device characteristics are anticipated in future efforts by incorporating relaxed, compositionally- graded Ge/GexSi1-x/Si with low threading dislocation densities (approximately 2 X 106/cm2) to bridge the gap in lattice constants between Si and GaAs. Recent progress towards this end includes the suppression of antiphase disorder during GaAs growth on Ge/GexSi1-x/Si by OMCVD and strong room temperature photoluminescence from In0.20Ga0.80As QW test structures on GaAs/GexSi1- x/Si at 920 nm.