Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Abstract

In this study, the effects of growth interruptions on Al0.17Ga0.83As/GaAs and GaAs/ InxGa1-xAs quantum wells (QWs) grown by organometallic chemical vapor deposition (OMCVD) were assessed using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Growth interruption times were varied between 60, 10, and 0 sec. For both material systems, as the interruption time was reduced, the ground-state QW transition energies increased, while the linewidths of the peaks decreased. For the Al0.17Ga0.83As/GaAs structures, 5 K PL data suggests that the incorporation of impurities is enhanced by longer growth interruption times. In addition, as the interruption time was reduced, the energy separation between the 5 K PL and PLE peaks (Stokes shift) decreased, and was as low as 2.6 meV for no interruption. For GaAs/In0.11Ga0.89As samples, 2 K PL data indicated that the incorporation of donor species was not a function of the growth interruption time.