Abstract
In this work, a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed. The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrödinger equation. Proposed model is extended for short channel devices by including semi-empirical correction. The impact of effective mass variation with film thicknesses is also discussed using the proposed model. All models are fully validated against the professional numerical device simulator for a wide range of device geometries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
