Analytical Frequency‐Domain Model for Coupled Interconnects of Doped Multilayer Graphene Nanoribbons and Mixed Carbon Nanotube Bundles

Abstract

An analytical frequency‐domain model, based on a temperature‐dependent equivalent‐single‐conductor (ESC) model, for coupled interconnects of multilayer graphene nanoribbon (MLGNR) and mixed carbon‐nanotube bundle (MCB) is presented. In this model, the input‐output transfer function of coupled interconnects is derived under dynamic switching conditions to analyze its bandwidth, delay, and stability performance. The obtained results demonstrate the best bandwidth performance of AsF5‐doped‐MLGNR among the undoped‐MLGNR (U‐MLGNR), doped‐MLGNR (viz., AsF5‐doped and FeCl3‐doped), MCB, and Cu interconnects. An improvement in a bandwidth of 14, 8.8, and 63.2 GHz is obtained with global length (≈1000 µm) AsF5‐doped‐MLGNR in comparison with U‐MLGNR, MCB, and Cu, respectively. Based on the Nyquist stability criterion, interconnects of doped‐MLGNR are found more stable than their U‐MLGNR and MCB counterparts, however, less stable than Cu interconnects. Also, a frequency‐domain model for complementary metal–oxide semiconductor (CMOS)‐gate‐driven single MLGNR interconnect is derived. It is noted that using the proposed CMOS‐gate based model, a bandwidth improvement of 12.25× is obtained with global length AsF5‐doped‐MLGNR with respect to a linear resistive model. Furthermore, the temperature‐dependent, frequency‐domain analysis of the capacitively coupled interconnects under functional switching conditions reveals that AsF5‐doped‐MLGNR interconnects are highly capable of filtering out the noise frequency components in the crosstalk‐induced noise