Abstract
In this paper, a 3D potential model for a triple-gate Si MOSFET is derived in weak inversion using the variable separation technique based on a perimeter weighted approach. The channel potential is solved from Poisson’s equation along two different planes of the device separately and then using the same variable separation technique and proper boundary conditions 3D potential is addressed. Hence, the solution is not directly obtained from 3D Poisson's equation and does not involve any complex computation. The I-V model of the device is then predicted using the drift-diffusion technique. The accuracy of the model is checked with respect to commercial TCAD simulation results, and good agreement is observed. Our proposed model considers short-channel effects but does not find any quantum mechanical effects. The model result has also been compared with the industry-standard model to validate its performance. Due to its good accuracy, the model can be potentially invoked into a numerical simulator to predict the device's electrical behavior.
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