Abstract
In this paper, a tri-material double-gate (TMDG) tunnel field effect transistor (TFET) is introduced. By using a variable separation technique, analytical full 2D channel potential and electric field models for TMDG TFET is derived from 2D Poisson's equation. The electric field distribution is used to compute the tunneling generation rate and further numerically calculate the tunneling current. The results demonstrate that a smaller local minimum of conduction band at the source side and a larger tunneling barrier at the drain side are formed by the gate work function mismatch. This special band energy profile can significantly boost the on-state performance and suppress the off-state current induced by the ambipolar effect. The data extracted from the developed models are in good accordance with the TCAD simulation results.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
