Abstract
The interface states properties of a hybrid diode based on GaAs and Rhodamine organic semiconductor were investigated by current–voltage and capacitance–conductance–voltage measurements. The Al/Rhodamine/p-GaAs diode exhibits a rectification behavior with the barrier height value of 0.794eV and ideality factor of 1.45. The interface states density of the diode was determined by Hill–Coleman method. The Dit value is decreased with increasing frequency. It is seen that the electronic parameters of the Al/Rhodamine/p-GaAs diode are significantly different from the conventional Al/p-GaAs Schottky diode. This indicates that Rhodamine organic semiconductor controls the interface properties of Al/p-GaAs Schottky diode.
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