Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Abstract

Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage () and conductance-voltage () properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been computed by taking into account the series resistance () and interface states () effects. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance (), and The values of and were determined as 810 Ω and 1.52 x−1012 eV−1 cm−2 for 30 kHz and 38 Ω and 3.38 x 1011 eV−1 cm−2 for 1 MHz. Experimental results corroborated that the and are influential parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance () and conductance () were corrected in order to obtain the real diode capacitance () and conductance (). Schottky diode parameters such as barrier height (), ionized donor density (), Fermi level (), built-in voltage () were extracted from the frequency-dependent and relations. The values of was determined as 0.796 eV for 30 kHz and 1.090 eV for 1 MHz. The and values were observed to decrease, while the values increase as the frequency increases. Results reveal that the fabricated diode can potentially be used as a promising candidate material for electronics applications.