Abstract
In our study, the effects of the metal oxide (aluminum oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode's characteristics were investigated. The Al2O3 thin film was suitable for its growth on a p-type silicon substrate by the atomic layer deposition (ALD) technique. In this study, a diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the theory of thermionic emission (TE) and Cheung's method. Using the TE method and Cheung’s method, the approximate values of Φb, n parameters were calculated as 0.77 eV, 5.43, and 0.77 Ev, 5.97, respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties. This research offers an understanding of the production and electrical characteristics of Schottky devices based on Al2O3.
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