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Abstract
In the conventional SLS crystallization method, we just perform a basic pre-align on the substrate stage and apply a whole substrate area scanning. Therefore, each TFT has different grain boundary(GB) location in channel region. The number of grain boundaries in channel also varies from one to two, which can cause non-uniform TFT characteristics and image quality deterioration of the panel. In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics between a normal SLS method and the grain boundary location controlled SLS method.
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