Analysis of a model of minority charge-carrier distributions generated in a three-layer semiconductor structure by a wide electron beam

Abstract

Based on the use of a model of independent sources, a method is described for the calculation of minority-charge-carrier distributions generated in three-layer planar semiconductor structures by a wide electron beam with energy typical of electron probe devices (5–30 keV). It is shown that, in limiting cases, equations describing these distributions agree with the data obtained previously for a two-layer semiconductor structure.