On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures

Abstract

The paper presents the results of modeling the distributions of minority charge carriers generated by a wide electron beam in two-layer semiconductor structures. The analytical results obtained using the matrix method are compared with the results of calculations obtained using the numerical method of finite differences. The studies are carried out for epitaxial structures of “solid solution of cadmium-mercury telluride –cadmium telluride” and two-layer gallium arsenide.