&lt;title&gt;Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam&lt;/title&gt;

M A Stepovich,M G Snopova,A G Khokhlov,Anatoly M Filachev

doi:10.1117/12.552175

<title>Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam</title>

M A Stepovich, M G Snopova + Show 2 more

https://doi.org/10.1117/12.552175

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Publication Date: Mar 1, 2004

Citations: 11

Affiliation: Bauman Moscow State Technical University

#Model Of Independent Sources #Two-layer Semiconductor + Show 8 more

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Abstract

The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 - 30 keV based on using the model of independent sources is described.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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