Comparison of analytical and numerical modeling of distributions of nonequilibrium minority charge carriers generated by a wide beam of medium-energy electrons in a two-layer semiconductor structure

Abstract

An analytical matrix method that makes it possible to calculate the distributions of nonequilibrium minority charge carriers generated in multilayer planar semiconductor structures by external influence is described. For the case of generation of nonequilibrium minority charge carriers by a wide electron beam in a two-layer structure, the results of model calculations using the analytical matrix method with the results of calculations using a numerical conservative difference scheme are compared. It is shown that the method allows to carry out calculations of the distributions of nonequilibrium minority charge carriers in a relatively short time with an accuracy sufficient for practical use in electron probe technologies.