Possibility of Applying the Matrix Method to Modeling the Cathodoluminscescence Caused by a Wide Electron Beam in a Planar Multilayer Semiconductor Structure

Abstract

Results are presented from investigating the possibility of applying the analytical matrix method to modeling the diffusion of nonequilibrium minority charge carriers and the subsequent cathodoluminescence caused by a wide electron beam in a planar structure of semiconductor optoelectronics with any number of layers. The proposed technique allows calculations to be made with an accuracy sufficient for practical use in electron probe technologies.