Abstract
We introduced a novel high-frequency source based on interband tunneling. A polarization-induced oscillation of trapped-hole-charge occurs in an AlGaSb/InAs/ AlGaSb resonant tunneling device. Rate equations for Zener tunneling, polarization, and electron-hole recombination is used to analyze the nonlinear dynamics of this device structure. The nonoscillatory state is unstable against the limit-cycle operation. The amplitude of trapped hole oscillation increases with bias, but the time-averaged values can be approximated by a step function. These lead to the hysteresis of the averaged trapped hole charge in AlGaSb barrier, and to the experimental intrinsic bistability in AlGaSb/InAs/AlGaSb resonant tunneling device. Large-scale time-dependent simulation of quantum transport with interband-tunneling dynamics is needed for the design optimization of this novel class of oscillator useful for high-bandwidth applications.
Highlights
The ’hetero’ junction has become the basic building block of most of the advanced high-speed devices for electronic, microwave, and optoelectronic applications [1,2]
For conventional resonant tunneling devices (RTD) [3,4,5,6], this occurs when the device is operating in the negative-differentialresistance (NDR) region, just after the resonant current peak
The oscillation addressed in this paper occurs before the resonant current peak, based on interband tunneling in RTD with staggered band-gap alignment
Summary
The ’hetero’ junction has become the basic building block of most of the advanced high-speed devices for electronic, microwave, and optoelectronic applications [1,2]. The oscillation addressed in this paper occurs before the resonant current peak, based on interband tunneling in RTD with staggered band-gap alignment. The new mechanism of modulating the resonant energy level in the quantum well with respect to the energy distribution of the electrons from the emitter can be described through the oscillatory build-up and decay of the polarization pairing between electrons in the quantum well and trapped holes in the barrier. This modulation is controlled by trapped holes (similar to base charges of a bipolar transistor). We refer to the polarization pair as a duon, since this Coulomb-correlated e-h pair only moves in
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