Abstract
Transmission zero engineering in lateral double-barrier resonant tunneling devices is investigated. We show that, by inserting a resonant cavity in the quantum well region of a lateral double-barrier resonant tunneling structure and engineering the placement of transmission zero-pole pairs, the current peak-to-valley ratio of the device can be drastically improved at low temperature. An advantage of this structure also is that a lower peak voltage can be obtained compared to the corresponding lateral double-barrier resonant tunneling device.
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