Abstract
The development towards lower voltages and even ultra-low power (ULP) technologies [J.B. Burr, Symposium Record, Hot Chips V, 1993, pp. 7.4.1–7.4.12; D. Liu, Ch. Svensson, IEEE J. Solid State Circuits 28(1)(1993) 10–17; G. Schrom et al., 24th European Solid State Device Research Conference-ESSDERC'94, 1994, pp. 679–682] makes ever higher demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling, which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on the interpolation of terminal charges and conductive currents which are determined from transient current/voltage data which can be obtained through measurement or simulation of the devices. Using this model, a variety of analog and digital circuits was simulated, and selected results were verified against device-level circuit simulations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
