Abstract
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease), less power consuming (313% power dissipation decrease) and much more resistant to transistor length (L) (125% gain) and threshold voltage mismatches (Vth) (233% gain).
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