An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

Abstract

The III-nitride nanowire heterostructure arrays with multiple InN disk light absorbing regions have been grown by plasma-assisted molecular beam epitaxy on (001)Si substrates, and guided wave photodiodes have been fabricated and characterized. The spectral photocurrent of the devices has been measured under reverse bias, and the data exhibit distinct shoulders in the range of 0.69–3.2 eV (0.39–1.8 μm). The estimated responsivity at a wavelength of 1.3 μm is 0.2 A/W. The nanowire photodiode response was also measured with an excitation at one facet provided by an edge-emitting laser fabricated with the same nanowire array and emitting at 1.3 μm.