Abstract
The study is devoted to synthesis and investigation of the optical properties of GaPN/GaP nanowire (NW) arrays grown on Si substrate (111) with plasma-assisted molecular beam epitaxy (PA-MBE). First, we demonstrate the growth of axial GaPN/GaP and GaP NW heterostructures. The morphology of GaP and GaPN/GaP NW arrays was investigated with scanning electron microscopy (SEM) to show that at low growth fluxes of activated nitrogen self-catalytic growth regime and nanowires morphology are preserved. Raman spectroscopy was used for investigation of phonon spectra features. Optical properties of the GaPN NW arrays were determined at room temperature with photoluminescence (PL) spectroscopy. Analysis of both Raman spectroscopy and PL results allowed to analyze the GaPN/GaP NWs chemical composition. Dilution of GaP NWs with N allows to significantly increase PL intensity and obtain broad PL signal in the optical spectral region demonstrating the potential of GaPN NWs for future nano-optoelectronics and photonics.
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