An extension of the ideal diode analysis for the heavily doped p- n diode

Abstract

In this paper, an extension of the ideal-diode analysis for the heavily-doped p- n junction diode is proposed. The heavy doping effects such as carrier degeneracy and band gap narrowing are accounted for by using a tractable empirical approximation for the reduced Fermi-energy given by[12] and employing effective intrinsic density. Under the assumption of low-level injection, it is found that the injected minority-carrier current, and the charge storage in the quasi-neutral regions should depend exponentially on values of F( Y), where F( Y) is a function of dopant dentisy at the depletion edge of the quasi-neutral emitter (or) base region of the p- n junction. Results of our calculations of excess hole current for the short base and the long-base diode show significant change from the values predictged by the conventional diode theory.