Abstract
The effects of heavy doping on the I–V characteristics and the transconductance of a heavily doped GaAs junction field-effect transistor (JFET) and a metal-semiconductor field-effect transistor (MESFET) are analyzed. Calculations were carried out by taking into account the heavy doping effects such as carrier degeneracy and bandgap narrowing. The results show that carrier degeneracy has a strong influence on the built-in potential in the junction between gate and channel and on the I–V characteristics of the heavily doped enhancement-mode JFET (E-JFET) and MESFET (E-MESFET) devices. These findings are important for modeling and design of heavily doped GaAs JFETs and MESFETs as well as other types of GaAs devices for VLSI applications.
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