An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors

Abstract

Various charged particles in space, including α- particles, neutrons, heavy ions, and photons, create stability and reliability concerns in memory circuits. Furthermore, these particles generate an ion track within the memory device, which disrupts the storage bit. The standard 6T SRAM is very susceptible to this upset. To address this issue, several authors proposed radiation-hardened SRAM cells. Most of the works consider adding redundant nodes to the memory cell. This study shows a new RHBD-14T SRAM memory cell with redundant nodes to deal with the soft error problem. The proposed RHBD-14T memory cell performance is compared to that of recent reliable radiation-hardened memory cells such as SEA-14T, QCCS-12T, NRHC-14T, RHMC-12T, HPHS-12T, SIMR-18T, SERSC-16T, RHWC-12T. The proposed RHBD-14T cell protects against single and double-node disruptions by considering minimum sensitive nodes layout area separation concept. Furthermore, proposed RHBD-14T exhibits 1.45x/ 1.06x/ 1.54x/ 1.25x/ 2.86x/ 1.39x/ 1.31x/ 1.57x times greater read stability than existing SEA-14T/ QCCS-12T/ NRHC-14T/ RHMC-12T/ HPHS-12T/ SIMR-18T/ SERSC-16T/ RHWC-12T memory cells.