An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing

Abstract

For compact modeling of the organic field-effect transistor above-threshold drain current, we suggest using an approach that was recently proposed for the improved compact MOSFET model with the correct accounting of the nonzero output conductance in the saturation regime. This approach ensures a monotonic decrease of transistor output conductance from its maximum value in the linear regime to the minimum value in the saturation regime.