Abstract
A model for a vertical metal base transistor is proposed. A virtual base is created by a hole-plasma which is maintained by injection of holes from a forward biased Schottky-diode. By using a Schottky-barrier controlled plasma instead of a controlled p— n-diode, the good power handling capabilities of the BSIT can be combined with improved speed performance. This is obtained by the low base spreading resistance. The metal is placed as a buried grid between the emitter and the collector on intrinsic or weakly doped silicon. The metal is oxidized to protect the base from n + doped emitter. A possible model for the transistor is given and the current gain is calculated. The injection efficiency is discussed in consideration with the design of the base and emitter. Different designs of the transistor are discussed with respect to possible fabrication techniques.
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