An analytical approach to the HEMT noise wave model parameter determination

Abstract

This paper presents an analytical approach to determination of the noise wave model parameters for a high electron-mobility transistor working under different temperature and frequency conditions. The presented approach is composed of two steps and provides more efficient determination of these parameters than in the case of optimization procedures commonly applied for that purpose in circuit simulators. The first step is extraction of the noise parameters of transistor intrinsic circuit from the measured noise parameters of whole transistor using an analytical noise de-embedding procedure. The second step is calculation of the noise wave model parameters from the de-embedded intrinsic noise parameters using existing formulas. The accuracy of the presented approach is validated in a wide frequency and temperature range by comparison of the transistor noise parameters simulated for the determined noise wave model parameters with the measured noise parameters.