Abstract
Most of the transistor noise models refer to the intrinsic device, providing relationships between the transistor noise model parameters and the noise parameters of the intrinsic device. Having in mind that the measured noise parameters correspond to the whole device including the device parasitics, the parameters of the noise models are most often determined by using optimizations in circuit simulators. In this paper, an efficient neural approach for straightforward determination of the noise model parameters, avoiding optimizations, is proposed. A detailed validation of the proposed approach was done by comparison of the measured transistor noise parameters with those obtained by using the extracted noise model parameters for two noise models—the Pospieszalski’s noise model and the noise wave model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
