Abstract
This paper presents a simple procedure for the extraction of scattering parameters and noise parameters of microwave transistors. A set of equation describing transistor noise parameters as the function of three equivalent noise wave temperatures is implemented within the circuit simulator Libra. The prediction of noise parameters for a broad frequency range is done on the basis of a single frequency noise parameter measurement. The procedure is applied to FET package models. Good agreement between modeled and measured noise parameters is observed.
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