Wave approach to S-parameter and noise parameter prediction of FET devices

Abstract

This paper presents a simple procedure for the extraction of scattering parameters and noise parameters of microwave transistors. A set of equation describing transistor noise parameters as the function of three equivalent noise wave temperatures is implemented within the circuit simulator Libra. The prediction of noise parameters for a broad frequency range is done on the basis of a single frequency noise parameter measurement. The procedure is applied to FET package models. Good agreement between modeled and measured noise parameters is observed.