Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

P.j Tasker ,J Braunstein,W Reinert ,M Schlechtweg

doi:10.1109/euma.1992.335733

Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

P.j Tasker , J Braunstein + Show 2 more

https://doi.org/10.1109/euma.1992.335733

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Publication Date: Sep 1, 1992

Citations: 34

Affiliation: Fraunhofer Institute for Applied Solid State Physics

#Noise Parameters #Measurement Of Noise Parameters + Show 8 more

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Abstract

A measurement and analysis technique has been developed that allows for, after s-parameter measurements, direct extraction of all four transistor noise parameters from a single noise figure measurement. A simple 50 Ω noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enablitg fully automated high frequency testing and wafer mappintg measurement systems to provide both s-parameters and noise parameters.

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