Abstract
The effect of nitrogen concentration on the screening with free carriers and binding energy of hydrogenic shallow donors in GaInAsN alloys is investigated. The binding energy is calculated using a novel algebraic model which was proposed recently by Gönül et al. (2006) [16], in order to find an analytical solution to the screened Coulomb potential. The results show that the nitrogen concentration is a strong factor in producing a screening field of free carriers and in affecting the binding energy of hydrogenic shallow donors.
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