Abstract

In this paper, we present an accurate high-frequency characterization of AC output conductance method to separate SOI specific floating-body effects (FBE) and self-heating effects (SHE) from DC I-V data. In DC measurement, the transistor TEG pattern dependence is essential in view of the SOI body potential, which is confirmed by 3-dimensional device simulation. In AC measurement, the power of small-signal is the most critical issue for removing the FBE and SHE components.

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