Abstract
To alleviate the thermal transfer problem and floating body effects in SOI devices, a new device structure called DSOI (Drain/Source On Insulator) is proposed and analyzed in this paper. The effectiveness of thermal resistance reduction is demonstrated using our new simple analytical model, which takes account of the cross-device thermal coupling effects for the first time. The predications of the model agree well with the 2-D numerical simulation and experimental results. The device simulation results show that BULK, SOI, and DSOI devices deliver almost the same amount of driving current in /spl sim/0.1 /spl mu/M regime even without considering the self-heating effects. And the DSOI structure speed advantage becomes more prominent if self-heating effects are included.
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