Abstract
An amorphous-crystalline silicon isotype heterojunction is studied. The electrostatic potential profile, the built-in and interface potentials, space charge region widths and C- V curves were calculated using different doping levels. The effect of small changes in the electron affinity, band gap and density of states in the gap of a-Si:H were calculated. The effect of a localized charge at the interface was determined. The results were applied to a multijunction of the ppn or nnp type.
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