Abstract
Concentration profiles of diffusing species in semiconductors are calculated including the effects of the electric fields at p− junctions. The junction electric field can significantly alter diffusion behavior near the junction at the growth temperature, and thus affect dopant uniformity and junction placement for some commonly occurring epitaxial growth conditions. The junction electric field affects diffusion in the same manner as the internal electric field that results from a dopant concentration gradient. The field can produce diffusion profiles with either enhanced or retarded diffusion rates at the junction and pile-up or depletion of the diffusing species near the junction. Several experimental examples for diffusion of Mg across a p− n junction in (Al,Ga)As during growth by liquid phase epitaxy are presented.
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