Abstract
The first GaInAsP based laser diode grown by all solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 µm was prepared. A low threshold current density of 510 A/cm2 was obtained for a broad-area laser having a cavity length of 1300 µm.
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