All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Abstract

Strain-compensated InAsP/InGaP/InP multiquantum well lasers emitting at 1.3 μm were grown by all solid source molecular beam epitaxy. A high characteristic temperature of 86 K was measured for temperatures between 20 and 120 °C for lasers with as-cleaved and high reflection coated facets. A low threshold current density of 115 A/cm2 per well was obtained for lasers with a cavity length of 1600 μm. Our results clearly demonstrate the suitability of a InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures and the potential of all solid source molecular beam epitaxy for growth of optoelectronic devices.