Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes

Abstract

We report on the solid source molecular beam epitaxy growth (SSMBE) of resonant cavity light-emitting diodes (RCLED) operating at 660 and 1300 nm wavelengths using valved cracking cells. The 1300 nm RCLED reported here is according to the best of the author's knowledge the first monolithic RCLED made on that wavelength. The performance characteristics of the grown devices show that SSMBE is a viable growth method for complex vertical cavity structures.