Abstract
Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.
Highlights
Long-wavelength 1.3 lm or 1.55 lm semiconductor lasers are key devices for optical fiber communications and have attracted much attention in recent years due to their zero dispersion and minimal absorption in silica fibers
Most commercialized semiconductor lasers operating at wavelength of 1.3 lm and 1.55 lm are made from the InGaAsP/InP material system
The high N content needed for long wavelength emission in GaInNAs quantum well (QW) lasers deteriorates the optical characteristics of the material and limits the device performance
Summary
Long-wavelength 1.3 lm or 1.55 lm semiconductor lasers are key devices for optical fiber communications and have attracted much attention in recent years due to their zero dispersion and minimal absorption in silica fibers. Studies on GaInNAs quantum dot (QD) structures have attracted much interest, since QD lasers, with three-dimensional carrier confinement, are anticipated to have many advantages over their QW counterparts, such as decreased Jtr, increased differential gain, high characteristic temperature (T0), and largely extended emission wavelength [20, 21].
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