AlGaAs/GaAs distributed feedback laser diodes grown by MOCVD

Abstract

AlGaAs/GaAs distributed feedback (DFB) laser diodes emitting at 880 and 760 nm were fabricated by a two-step MOCVD growth technique. Epitaxial growth was carried out in a conventional atmospheric-pressure MOCVD system with a vertical reactor. A mesa-stripe geometry and separate-confinement heterostructure (SCH) was employed for the laser structure. The cladding layer ( x = 0.35, 0.48) was successfully regrown on the guiding layer ( x = 0.15, 0.25) corrugated with a 0.25 μm period (2nd order grating). Continuous wave (CW) operations were achieved up to 53°C for devices emitting at 880 nm and up to 10°C for devices emitting at 760 nm. A threshold current as low as 55 mA was obtained for a device emitting at 880 nm under CW operation at room temperature.