Abstract
Singlemode continuous-wave (CW) operation of GaInNAs distributed feedback (DFB) laser diodes emitting at 1.4 µm has been realised. Solid source molecular beam epitaxy was used to grow a double quantum well separate confinement heterostructure with GaInNAs active layer. Threshold currents as low as 42 mA and external efficiencies as high as 0.24 W/A have been demonstrated in CW operation. Singlemode emission at 1406 nm with a sidemode suppression ratio larger than 49 dB has been achieved.
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