Abstract
Continuous-wave (CW) operation of GaInNAs laser diodes in the 1.4 /spl mu/m range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by solid source molecular beam epitaxy. Threshold currents as low as 66 mA and external efficiencies as high as 0.29 W/A could be demonstrated in CW operation. Lasing was observed up to 150/spl deg/C and a characteristic temperature T/sub 0/ of 111K was demonstrated. The emission wavelength at room temperature was centred at 1417 nm.
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