Abstract
We have improved the feasibility of ZnMgSSe as cladding layers for blue and green laser diodes. Based on an ZnCdSe/ZnSSe/ZnMgSSe separate- confinement heterostructure (SCH), we have succeeded in attaining continuous-wave (CW) operation for blue-emitting laser diode (LD) with a wavelength of 489.9 nm and pulsed operation with a wavelength of 480.5 nm at room temperature. We also have achieved pulsed operation up to 834 mW at room temperature with a wavelength of 507 nm, and CW operation up to 80 degree(s)C. The device characteristics of II_VI wide band-gap LDs are virtually as good as the established III-V materials based LDs except the device lifetime. The life time of an MQW-SCH LD has been improved by using both a GaAs and a ZnSe buffer layers, and is as long as 9 min at room temperature under CW operation.
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