Abstract
Abstract This research introduces a photodetector capable of differentiating between ultraviolet (UV) and visible light, employing the unique properties of zinc oxide (ZnO) and α-silicon (α-Si). The core of this innovative device is a pixel unit circuit, designed with three integral components: a delay circuit for precise timing, a photosensitive element composed of an α-Si thin film resistor and a ZnO thin film transistor (ZnO TFT) for respective light spectrum detection, and a source follower for effective signal transmission. Through simulations conducted in Cadence Virtuoso, the device’s responsiveness to varying intensities of UV and visible light was assessed. Adjustments to the α-Si resistance and ZnO TFT threshold voltage simulated realistic light conditions, demonstrating the device’s capability to generate distinct voltage changes in response to different light spectrums. These results underline the potential of the design for larger-scale implementations and highlight its adaptability and precision in detecting diverse light intensities. This research provides the basis for the development of simultaneous UV-visible detection and scalable light detection systems. In addition, taking advantage of the properties of ZnO TFT, which can also be used in the future in curved transparent environments.
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