Abstract
The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of <TEX>$6.99cm^2/Vs$</TEX>, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of <TEX>$2.45{\times}10^8$</TEX>. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of <TEX>$5.74{\times}10^2$</TEX>. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.
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