Abstract
This paper describes a gate control method where an IGBT is controlled in its linear region by means of closed loop control in order to regulate the voltage slope during turn-on and to clamp the voltage of an anti-parallel diode in a source commutated converter. Controlling the voltage slope may be necessary in a high voltage converter to avoid emission of EMI or to avoid triggering oscillations which may cause insulation failure. Controlling the switching trajectory without influence from the device characteristics is important where series-connection is necessary to increase the overall blocking voltage. The control method has been verified by means of a prototype.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
