Abstract
The blocking voltage in diode (i.e., PN junction) using neutron-transmutation-doped Si can be improved by a field oxide annealed in N2O. It is experimentally determined that the reverse breakdown voltage is clearly increased although the ideality factor and leakage current density increase slightly. The improvement of blocking voltage may be due to the replacement of strained Si–O bonds by Si–N bonds in the field oxide and/or the relaxation of SiO2/Si interfacial strain. The increase of the ideality factor and leakage current for N2O-annealed devices might be attributed to the increase of SiO2/Si interface states.
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